| PART |
Description |
Maker |
| XRAG208 |
432-bit UHF, EPCglobal Class1 Generation2 and ISO 18000-6C, contactless memory chip with user memory
|
STMicroelectronics
|
| XRA00 XRA00-SBN18I XRA00-W4I |
UHF, EPCglobal, Contactless Memory IC 96 bit ePC with Inventory and Kill Function
UHF/ EPCglobal/ Contactless Memory IC 96 bit ePC with Inventory and Kill Function
EEPROM (Electrically-Erasable PROM) - Datasheet Reference
From old datasheet system
|
STMicroelectronics
ST Microelectronics
|
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| MH32S72DBFA-6 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH32S72VJA-6 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| M5M29GT320VP-80 M5M29GB320VP-80 M5M29VT320VP M5M29 |
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
RENESAS[Renesas Electronics Corporation]
|
| MH32D64KQH-75 MH32D64KQH-10 |
2,147,483,648-BIT (33,554,432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
|
Mitsubishi Electric Corporation
|
| MH32D72AKLA-75 MH32D72AKLA-10 |
2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
|
Mitsubishi Electric Corporation
|
| MH32S72DBFA-8 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM 2415919104位（33554432 - Word2位）同步动态随机存储器
|
Mitsubishi Electric, Corp.
|
| BR-C40 |
BR-C40# Class1, Class2, and Class3 Bluetooth? ver2.0
|
List of Unclassifed Manufacturers
|
